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fdbl86063_f085 n-channel power trench ? mosfet www.onsemi.com 1 publication order number: fdbl86063_f085/d semiconductor components industries, llc, 2016 december, 2016, rev. 1.0 fdbl86063_f085 n-channel power trench ? mosfet 100 v, 240 a, 2.6 m ? features ? typical r ds(on) = 2 m? at v gs = 10v, i d = 80 a ? typical q g(tot) = 73 nc at v gs = 10v, i d = 80 a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter/alternator ? distributed power architectures and vrm ? primary switch for 12v systems mosfet maximum ratings t j = 25c unless otherwise noted. symbol parameter ratings units v dss drain-to-source voltage 100 v v gs gate-to-source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 240 a pulsed drain current t c = 25c see figure 4 e as single pulse avalanche energy (note 2) 160 mj p d power dissipation 357 w derate above 25 o c2 . 3 8 w / o c t j , t stg operating and storage temperature -55 to + 175 o c r ? jc thermal resistance, junction to case 0.42 o c/w r ? ja maximum thermal resistance, junction to ambient (note 3) 43 o c/w notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 50uh, i as = 80a, v dd = 100v during inductor charging and v dd = 0v during time in avalanche. 3: r ? ja is the sum of the junction-to-case and case-to-ambient thermal re sistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. r ? jc is guaranteed by design, while r ? ja is determined by the board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. package marking and ordering information notes: device marking device package reel size tape width quantity fdbl86063 fdbl86063_f085 mo-299a 13?? 24mm 2000 units for current package drawing, please refer to the fairchild website at https://www.fairch ildsemi.com/package-drawings/ ps/psof08a.pdf
fdbl86063_f085 n-channel power trench ? mosfet 2 www.onsemi.com electrical characteristics t j = 25c unless otherwise noted. off characteristics on characteristics dynamic characteristics symbol parameter test conditions min. typ. max. units b vdss drain-to-source breakdown voltage i d = 250 p a, v gs = 0v 100 - - v i dss drain-to-source leakage current v ds = 100v t j = 25 o c - -1 p a v gs = 0v t j = 175 o c (note 4) - - 1.5 ma i gss gate-to-source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a22.94v rds(on) drain-to-source on-resistance i d = 8 0 a t j = 25 o c -2.02.6m : v gs = 10v t j = 175 o c (note 4) - 4.2 5.6 m : c iss input capacitance v ds = 50v, v gs = 0v, f = 1mhz - 5120 - pf c oss output capacitance - 3220 - pf c rss reverse transfer capacitance - 32 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 0.4 - : q g(tot) total gate charge v gs = 0 to 10v -7395nc q g(th) threshold gate charge v gs = 0 to 2v - 9 - nc q gs gate-to-source gate charge v dd = 50v,i d =80a -22-nc q gd gate-to-drain ?miller? charge - 17 - nc switching characteristics drain-source diode characteristics note: 4: the maximum value is specified by design at t j = 175c. product is not tested to this condition in production. t on turn-on time v dd = 50v, i d = 80a v gs = 10v, r gen = 6 : - - 53 ns t d(on) turn-on delay - 25 - ns t r rise time - 16 - ns t d(off) turn-off delay - 32 - ns t f fall time - 8 - ns t off turn-off time - - 51 ns v sd source-to-drain diode voltage i sd =80a, v gs = 0v - 0.9 1.25 v i sd = 40a, v gs = 0v - 0.8 1.2 v t rr reverse-recovery time i f = 80a, di sd /dt = 100a/ p s - 107 139 ns q rr reverse-recovery charge - 175 260 nc
fdbl86063_f085 n-channel power trench ? mosfet 3 www.onsemi.com 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z ? jc t, rectangular pulse duration(s) duty cycle - descending order 2 typical characteristics figure 1. normalized power dissipation vs. case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs. case temperature 25 50 75 100 125 150 175 200 0 30 60 90 120 150 180 210 240 270 300 current limited by package v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ? jc x r ? jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 2000 t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdbl86063_f085 n-channel power trench ? mosfet 4 www.onsemi.com figure 5. 0.1 1 10 100 200 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 100ms forward bias safe operating area 0.001 0.01 0.1 1 10 100 1000 1 10 100 300 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r ?? 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 1234567 0 50 100 150 200 250 300 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 250 ? s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 300 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 9. 012345 0 50 100 150 200 250 300 v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 250 ? s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 012345 0 50 100 150 200 250 300 v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 250 ? s pulse width tj=175 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics typical characteristics
fdbl86063_f085 n-channel power trench ? mosfet 5 www.onsemi.com figure 11. 345678910 0 10 20 30 40 50 i d = 80a pulse duration = 250 ? s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m ? ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c r dson vs. gate voltage figure 12. normalized r dson vs. junction temperature -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 pulse duration = 250 ? s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs = v ds i d = 250 ? a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs. temperature figure 14. -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 i d = 5ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs. junction temperature figure 15. 0.1 1 10 100 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs. drain to source voltage figure 16. 0 1020304050607080 0 2 4 6 8 10 v dd = 60v v dd = 50v v dd =40v i d = 80a q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs. gate to source voltage typical characteristics
10 7.40 7.60 3.75 1.90 2.10 6.55 6.75 bottom view 6.64 13.28 8.10 0.60 2.90 2.95 10.20 4.45 0.80 1.20 6.64 land pattern recommendation 9.70 9.90 0.50 0.70 0.60 0.80 (3.30) a b 1.20 0.60 0.70 0.90 0.20 c a b (0.40) 2.20 2.40 0.40 0.60 top view side view c notes: unless otherwise specified a) package standard reference: jedec mo-299, issue a, dated november 2009. b) all dimensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-1994. e) drawing file name: mkt-psof08arev3 detail "b" 9.80 10.00 (0.35) 10.28 10.48 8.40 1 8 1 8 (8.00) detail "b" (0.35) detail "a" detail "a" 10 0.60 0.80 0.40 0.60 2.80 0.25 c a b 0.20 c 0.20 c 11.58 11.78 7x 0.65 3.30 2.60 0.10 2x 4.73 (2x) 5.19 5.89 1.20 3x 4.99 1.46 0.86 2.04 5.10 (2x) (2x) (8x) (2x) 0.10 c 0.20 c a b (7.15) (8.30)
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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